highly efficient arc less ingap

highly efficient arc less ingap

26/8/2014· Abstract In order to obtain high-conversion percentage of the input available light, anti-reflection coating plays an important role in solar cell. In this work, the performance of InGaP/GaAs dual-junction solar cell has been investigated with single layer (Al 2 O 3, TiO 2, and ITO) and double layers (Al 2 O 3 /TiO 2, and Al 2 O 3 /ITO) ARC. ...

ترجمه مقاله Optimum Design of ARC-less InGaP/GaAs DJ Solar Cell with Hetero Tunnel Junction The operation of hetero In0.49Ga0.51P–Al0.7Ga0.3As tunnel diodes has been evaluated, and an approach for optimizing the back surface field (BSF) layer of a InGaP/GaAs dual-junction (DJ) solar cell developed.

جامع ترین وبسایت ارائه دهنده آموزش نرم افزارهای تخصصی فنی و مهندسی، تولید محصولات آموزشی و انجام شبیه سازی با سیلواکو (Silvaco) عنوان کلی دسته ها تبلیغات کتب آموزشی

J.W. Leem, Y.T. Lee, J.S. Yu, Optimum design of InGaP/GaAs dual-junction solar cells with different tunnel diodes, Opt. Quantum Electron 41- 605,(2010). K. Jolson Singh, S.K. Sarkar, Highly efficient ARC less InGaP/GaAs DJ solar cell numerical modeling

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translate to Persian - Highly efficient ARC less InGaP/GaAs DJ solar cell numerical modeling using optimized InAlGaP BSF layers دسته بندی: لیزر و اپتیک ترجمه مقاله 18 تیر 1399 Mohandes360.ir ...

1/7/2018· K.J. Singh, S.K. SarkarHighly efficient ARC less InGaP/GaAs DJ solar cell numerical modeling using optimized InAlGaP BSF layers Opt. Quant. Electron., 43 …

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We demonstrate that the open circuit voltage (V oc) of InGaP solar cells is not significantly influenced by TDDs less than 2 × 10 6 cm-2. Fabricated InGaP more » solar cells grown on a Ge-on-Si virtual substrate and a Ge substrate exhibit V oc in the range of 0.96 to 1.43 V under an equivalent illumination in the range of ~0.5 Sun.

22/4/2014· In this paper, we report highly efficient InGaP solar cells and investigate the thickness dependence of the InGaP absorption layer. Moreover, we report on InGaP/GaAs tandem solar cells with different carrier concentrations in a tunnel junction between the top InGaP and bottom GaAs cells fabricated using solid-source MBE.

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ترجمه مقاله Efficient InGaP/GaAs DJ solar cell with double back surface field layer An effective and optimised BSF layer is an important layer in both single junction and multijunction solar cells. In this work the use of the double layer BSF for top cell with their varied ...

1/4/2016· This high efficiency is possible because there is efficient absorption of solar radiation due to presence of multiple junctions. Singh et al. in 2012 designed ARC less InGaP/GaAs DJ solar cell with optimized In 0.5 (Al 0.7 Ga 0.3) 0.5 P bottom BSF layer.

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1/7/2016· Singh et al., in 2012 designed an ARC less InGaP/GaAs DJ solar cell with optimized In 0.5 (Al 0.7 Ga 0.3) 0.5 P bottom BSF layer. For this optimized structure, the maximum J sc = 16.09 mA/cm 2 , V oc = 2.66 V, and FF = 89.50% are obtained under AM1.5G illumination, exhibiting a maximum conversion efficiency of 32.196% for 1 sun and 36.678%for 1000 suns.

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1/11/2017· Kh.J. Singh, S.K. SarkarHighly efficient ARC less InGaP/GaAs DJ solar cell numerical modeling using optimized InAlGaP BSF layers Opt. Quant. Electron., 43 …

ترجمه مقاله Design and evaluation of ARC less InGaPGaAs DJ solar cell with InGaP tunnel junction and optimized double top BSF layer The presence and performance of the tunnel junction layer and back surface field (BSF) layers is the chief reason behind the high efficiency of the multi-junction solar cells.

9/11/2011· Highly efficient ARC less InGaP/GaAs DJ solar cell numerical modeling using optimized InAlGaP BSF layers Khomdram Jolson Singh 1 & Subir Kumar Sarkar 2 Optical and Quantum Electronics volume 43, pages 1 – 21 (2012)Cite this article 551 Accesses 31 ...

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ترجمه مقاله Highly efficient ARC less InGaP/GaAs DJ solar cell numerical modeling using optimized InAlGaP BSF layers ترجمه مقاله Improving the performance of a multi-junction solar cell by optimizing BSF, base and emitter layers

جامع ترین وبسایت ارائه دهنده آموزش نرم افزارهای تخصصی فنی و مهندسی، تولید محصولات آموزشی و انجام شبیه سازی با سیلواکو (Silvaco) صفحه اصلی دسته بندی ها رپورتاژ آگهی جزوات آموزشی گزارش کار ...

1/5/2017· K.J. Singh, S.K. SarkarHighly efficient ARC less InGaP/GaAs DJ solar cell numerical modeling using optimized InAlGaP BSF layers Opt. Quantum Electron., 43 …

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A highly efficient (>40%) ARC less dual junction solar cell is designed with low band gap GaSb. Use of GaSb as the bottom cell increases the spectral response of the cell up to 1800 nm.

Highly efficient ARC less InGaP/GaAs DJ solar cell numerical modeling using optimized InAlGaP BSF layers Article (PDF Available) in Optical and Quantum Electronics 43(1-5) · February 2011 with ...

Highly efficient ARC less InGaP/GaAs DJ solar cell numerical modeling using optimized InAlGaP BSF layers Article Full-text available Feb 2011 OPT QUANT …

In this work the impact of variation in mole fraction of tunnel junction and doping concentration of top window layer are investigated on the photovoltaic performance of dual junction InGaP/GaAs solar cell on silicon substrate. How does the Si substrate help this structure to act as a low cost concentrator cell for terrestrial application is also discussed. The detailed analysis of the cell is ...

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The monolithic integration of photoelectrochemical solar energy conversion and electrochemical energy storage offers an efficient and compact approach toward practical solar energy utilization. This work presents the design principles for and the demonstration of a highly efficient integrated solar flow battery device with a record solar-to-output electricity efficiency. These results will ...